Band structure characterization of WS2 grown by chemical vapor deposition

Full-range electrical characteristics of WS2 transistors

(2015) Jatinder Kumar et al.   APPLIED PHYSICS LETTERS

A tight-binding model for MoS2monolayers

(2015) E Ridolfi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Spin–orbit coupling in the band structure of monolayer WSe2

(2015) Duy Le et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Electronic structure, spin-orbit coupling, and interlayer interaction in bulkMoS2andWS2

(2015) Drew W. Latzke et al.   PHYSICAL REVIEW B

Electronic Structure of Epitaxial Single-LayerMoS2

(2015) Jill A. Miwa et al.   PHYSICAL REVIEW LETTERS

Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

(2015) A.T. Hanbicki et al.   SOLID STATE COMMUNICATIONS

k·ptheory for two-dimensional transition metal dichalcogenide semiconductors

(2015) Andor Kormányos et al.   2D Materials

High-performance photocurrent generation from two-dimensional WS2 field-effect transistors

(2014) Seung Hwan Lee et al.   APPLIED PHYSICS LETTERS

Electronic and thermoelectric properties of few-layer transition metal dichalcogenides

(2014) Darshana Wickramaratne et al.   JOURNAL OF CHEMICAL PHYSICS

Symmetry-resolved surface-derived electronic structure of MoS2(0 0 0 1)

(2014) Takashi Komesu et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition

(2014) Hennrik Schmidt et al.   NANO LETTERS

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

(2014) Hsun-Jen Chuang et al.   NANO LETTERS

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

(2014) Xidong Duan et al.   Nature Nanotechnology

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

(2014) Britton W. H. Baugher et al.   Nature Nanotechnology

Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor

(2014) J. M. Riley et al.   Nature Physics

Tightly Bound Excitons in MonolayerWSe2

(2014) Keliang He et al.   PHYSICAL REVIEW LETTERS

Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy

(2014) A. R. Klots et al.   Scientific Reports

Band offsets and heterostructures of two-dimensional semiconductors

(2013) Jun Kang et al.   APPLIED PHYSICS LETTERS

Facile growth of monolayer MoS2 film areas on SiO2

(2013) John Mann et al.   EUROPEAN PHYSICAL JOURNAL B

Zeeman-type spin splitting controlled by an electric field

(2013) Hongtao Yuan et al.   Nature Physics

Quasiparticle band structures and optical properties of strained monolayer MoS2and WS2

(2013) Hongliang Shi et al.   PHYSICAL REVIEW B

Electronic properties of the MoS2-WS2heterojunction

(2013) K. Kośmider et al.   PHYSICAL REVIEW B

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

(2012) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

(2012) Daniele Braga et al.   NANO LETTERS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

(2012) Ashwin Ramasubramaniam   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu

(2010) Stefan Grimme et al.   JOURNAL OF CHEMICAL PHYSICS

Angle-resolved photoemission spectroscopy and imaging with a submicrometre probe at the SPECTROMICROSCOPY-3.2L beamline of Elettra

(2010) Pavel Dudin et al.   JOURNAL OF SYNCHROTRON RADIATION