High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability
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Title
High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability
Authors
Keywords
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Journal
Physica Status Solidi-Rapid Research Letters
Volume -, Issue -, Pages 1900105
Publisher
Wiley
Online
2019-04-26
DOI
10.1002/pssr.201900105
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Note: Only part of the references are listed.- Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing
- (2019) Yuta Saito et al. APPLIED PHYSICS LETTERS
- Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study
- (2018) Nian-Ke Chen et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices
- (2018) Philippe Kowalczyk et al. Small
- Phase-Change Memory—Towards a Storage-Class Memory
- (2017) Scott W. Fong et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states
- (2017) Hisao Nakamura et al. Nanoscale
- Dynamic reconfiguration of van der Waals gaps within GeTe–Sb2Te3 based superlattices
- (2017) Jamo Momand et al. Nanoscale
- Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
- (2017) Wei Zhang et al. Nanoscale Research Letters
- Application of phase-change materials in memory taxonomy
- (2017) Lei Wang et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues
- (2017) Pierre Noé et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
- (2017) Wei Zhang et al. Nanoscale Research Letters
- Nanoscale Bipolar Electrical Switching of Ge2 Sb2 Te5 Phase-Change Material Thin Films
- (2017) Xinxing Sun et al. Advanced Electronic Materials
- Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation
- (2017) Stefano Cecchi et al. APL Materials
- Forming-less and Non-Volatile Resistive Switching in WOX by Oxygen Vacancy Control at Interfaces
- (2017) Seokjae Won et al. Scientific Reports
- Intermixing during Epitaxial Growth of van der Waals Bonded Nominal GeTe/Sb2Te3 Superlattices
- (2016) Ruining Wang et al. CRYSTAL GROWTH & DESIGN
- Can conventional phase-change memory devices be scaled down to single-nanometre dimensions?
- (2016) Hasan Hayat et al. NANOTECHNOLOGY
- Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials
- (2016) Peter Zalden et al. PHYSICAL REVIEW LETTERS
- Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices
- (2016) Barbara Casarin et al. Scientific Reports
- A two-step process for growth of highly oriented Sb2Te3 using sputtering
- (2016) Yuta Saito et al. AIP Advances
- Recent Progress in Phase-Change_newline Memory Technology
- (2016) Geoffrey W. Burr et al. IEEE Journal on Emerging and Selected Topics in Circuits and Systems
- Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
- (2016) Valeria Bragaglia et al. Scientific Reports
- Bipolar switching in chalcogenide phase change memory
- (2016) N. Ciocchini et al. Scientific Reports
- Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires
- (2015) Sungjin Park et al. ACS Applied Materials & Interfaces
- Impact of Thermoelectric Effects on Phase Change Memory Characteristics
- (2015) Nicola Ciocchini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier
- (2015) Chiyui Ahn et al. NANO LETTERS
- Bipolar resistive switching behavior of an amorphous Ge2Sb2Te5thin films with a Te layer
- (2015) Sijung Yoo et al. Nanoscale
- Interface formation of two- and three-dimensionally bonded materials in the case of GeTe–Sb2Te3 superlattices
- (2015) Jamo Momand et al. Nanoscale
- Self-organized van der Waals epitaxy of layered chalcogenide structures
- (2015) Yuta Saito et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Modeling of switching mechanism in GeSbTe chalcogenide superlattices
- (2015) Xiaoming Yu et al. Scientific Reports
- Ferroelectric switching in epitaxial GeTe films
- (2014) A. V. Kolobov et al. APL Materials
- What Lies Ahead for Resistance-Based Memory Technologies?
- (2013) Yoon-Jong Song et al. COMPUTER
- Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb2Te3Superlattices
- (2013) J. Tominaga et al. Advanced Materials Interfaces
- Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
- (2012) Daniele Ielmini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A reconsideration of the thermodynamics of phase-change switching
- (2012) Junji Tominaga et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM
- (2011) Daniele Ielmini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Interfacial phase-change memory
- (2011) R. E. Simpson et al. Nature Nanotechnology
- Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation
- (2009) Ramanathaswamy Pandian et al. APPLIED PHYSICS LETTERS
- Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
- (2009) Bin Gao et al. IEEE ELECTRON DEVICE LETTERS
- Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
- (2009) H.Y. Lee et al. IEEE ELECTRON DEVICE LETTERS
- Role of Ge Switch in Phase Transition: Approach using Atomically Controlled GeTe/Sb2Te3Superlattice
- (2008) Juniji Tominaga et al. JAPANESE JOURNAL OF APPLIED PHYSICS
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