High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability

Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing

(2019) Yuta Saito et al.   APPLIED PHYSICS LETTERS

Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study

(2018) Nian-Ke Chen et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices

(2018) Philippe Kowalczyk et al.   Small

Phase-Change Memory—Towards a Storage-Class Memory

(2017) Scott W. Fong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states

(2017) Hisao Nakamura et al.   Nanoscale

Dynamic reconfiguration of van der Waals gaps within GeTe–Sb2Te3 based superlattices

(2017) Jamo Momand et al.   Nanoscale

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

(2017) Wei Zhang et al.   Nanoscale Research Letters

Application of phase-change materials in memory taxonomy

(2017) Lei Wang et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

(2017) Pierre Noé et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

(2017) Wei Zhang et al.   Nanoscale Research Letters

Nanoscale Bipolar Electrical Switching of Ge2 Sb2 Te5 Phase-Change Material Thin Films

(2017) Xinxing Sun et al.   Advanced Electronic Materials

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

(2017) Stefano Cecchi et al.   APL Materials

Forming-less and Non-Volatile Resistive Switching in WOX by Oxygen Vacancy Control at Interfaces

(2017) Seokjae Won et al.   Scientific Reports

Intermixing during Epitaxial Growth of van der Waals Bonded Nominal GeTe/Sb2Te3 Superlattices

(2016) Ruining Wang et al.   CRYSTAL GROWTH & DESIGN

Can conventional phase-change memory devices be scaled down to single-nanometre dimensions?

(2016) Hasan Hayat et al.   NANOTECHNOLOGY

Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials

(2016) Peter Zalden et al.   PHYSICAL REVIEW LETTERS

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

(2016) Barbara Casarin et al.   Scientific Reports

A two-step process for growth of highly oriented Sb2Te3 using sputtering

(2016) Yuta Saito et al.   AIP Advances

Recent Progress in Phase-Change_newline Memory Technology

(2016) Geoffrey W. Burr et al.   IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

(2016) Valeria Bragaglia et al.   Scientific Reports

Bipolar switching in chalcogenide phase change memory

(2016) N. Ciocchini et al.   Scientific Reports

Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires

(2015) Sungjin Park et al.   ACS Applied Materials & Interfaces

Impact of Thermoelectric Effects on Phase Change Memory Characteristics

(2015) Nicola Ciocchini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier

(2015) Chiyui Ahn et al.   NANO LETTERS

Bipolar resistive switching behavior of an amorphous Ge2Sb2Te5thin films with a Te layer

(2015) Sijung Yoo et al.   Nanoscale

Interface formation of two- and three-dimensionally bonded materials in the case of GeTe–Sb2Te3 superlattices

(2015) Jamo Momand et al.   Nanoscale

Self-organized van der Waals epitaxy of layered chalcogenide structures

(2015) Yuta Saito et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Modeling of switching mechanism in GeSbTe chalcogenide superlattices

(2015) Xiaoming Yu et al.   Scientific Reports

Ferroelectric switching in epitaxial GeTe films

(2014) A. V. Kolobov et al.   APL Materials

What Lies Ahead for Resistance-Based Memory Technologies?

(2013) Yoon-Jong Song et al.   COMPUTER

Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb2Te3Superlattices

(2013) J. Tominaga et al.   Advanced Materials Interfaces

Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM

(2012) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A reconsideration of the thermodynamics of phase-change switching

(2012) Junji Tominaga et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

(2011) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Interfacial phase-change memory

(2011) R. E. Simpson et al.   Nature Nanotechnology

Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation

(2009) Ramanathaswamy Pandian et al.   APPLIED PHYSICS LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Role of Ge Switch in Phase Transition: Approach using Atomically Controlled GeTe/Sb2Te3Superlattice

(2008) Juniji Tominaga et al.   JAPANESE JOURNAL OF APPLIED PHYSICS