Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states
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Title
Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states
Authors
Keywords
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Journal
Nanoscale
Volume 9, Issue 27, Pages 9386-9395
Publisher
Royal Society of Chemistry (RSC)
Online
2017-06-22
DOI
10.1039/c7nr03495d
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