Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
出版年份 2019 全文链接
标题
Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
作者
关键词
-
出版物
Nanoscale Research Letters
Volume 14, Issue 1, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2019-05-09
DOI
10.1186/s11671-019-2956-4
参考文献
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