Investigation of gate induced noise in E-mode GaN MOS-HEMT and its effect on noise parameters
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Title
Investigation of gate induced noise in E-mode GaN MOS-HEMT and its effect on noise parameters
Authors
Keywords
-
Journal
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
Volume -, Issue -, Pages e2318
Publisher
Wiley
Online
2018-01-10
DOI
10.1002/jnm.2318
References
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Related references
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- (2012) T R LENKA et al. PRAMANA-JOURNAL OF PHYSICS
- Temperature-Dependent Microwave Noise Characteristics in ALD $\hbox{Al}_{2}\hbox{O}_{3}$/AlGaN/GaN MISHEMTs on Silicon Substrate
- (2011) Z. H. Liu et al. IEEE ELECTRON DEVICE LETTERS
- Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates
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- A new analytical high frequency noise parameter model for AlGaN/GaN HEMT
- (2010) Xiaoxu Cheng et al. SOLID-STATE ELECTRONICS
- Compact Channel Noise Models for Deep-Submicron MOSFETs
- (2009) Zhiyuan Li et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Thermal Study of the High-Frequency Noise in GaN HEMTs
- (2008) M. Thorsell et al. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
- A new small-signal modeling and extraction method in AlGaN/GaN HEMTs
- (2007) Jing Lu et al. SOLID-STATE ELECTRONICS
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