Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

Title
Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT
Authors
Keywords
2DEG, GaN, High –k, MOS-HEMT, TCAD
Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 112, Issue -, Pages 374-382
Publisher
Elsevier BV
Online
2017-09-26
DOI
10.1016/j.spmi.2017.09.045

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