Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

Influence of dislocation density and carbon impurities in i-GaN layer on the performance of Schottky barrier ultraviolet photodetectors

(2018) Yi Linkai et al.   Materials Research Express

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

(2018) Feng Liang et al.   Nanomaterials

A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen

(2017) Masahiko Matsubara et al.   JOURNAL OF APPLIED PHYSICS

A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies

(2017) Masahiko Matsubara et al.   JOURNAL OF APPLIED PHYSICS

Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

(2017) Feng Liang et al.   JOURNAL OF CRYSTAL GROWTH

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

(2017) Theodore D Moustakas et al.   REPORTS ON PROGRESS IN PHYSICS

First-Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: CN +ON and GaN:CN

(2017) Hai-Shan Zhang et al.   Advanced Optical Materials

Hydrogen-carbon complexes and the blue luminescence band in GaN

(2016) D. O. Demchenko et al.   JOURNAL OF APPLIED PHYSICS

Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence

(2016) M. Julkarnain et al.   OPTICAL MATERIALS

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes

(2016) J. Yang et al.   OPTICS EXPRESS

A direct evidence of allocating yellow luminescence band in undoped GaN by two-wavelength excited photoluminescence

(2015) M. Julkarnain et al.   APPLIED PHYSICS LETTERS

Carbon as a source for yellow luminescence in GaN: Isolated CN defect or its complexes

(2015) Sayre G. Christenson et al.   JOURNAL OF APPLIED PHYSICS

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

(2014) M. A. Reshchikov et al.   PHYSICAL REVIEW B

Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

(2014) X.G. He et al.   THIN SOLID FILMS

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Gallium vacancies related yellow luminescence in N-face GaN epitaxial film

(2012) Huayong Xu et al.   APPLIED SURFACE SCIENCE

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

(2009) D. G. Zhao et al.   APPLIED PHYSICS LETTERS