Journal
NANOMATERIALS
Volume 8, Issue 9, Pages -Publisher
MDPI
DOI: 10.3390/nano8090744
Keywords
unintentionally doped GaN; yellow luminescence band; carbon impurity
Categories
Funding
- Science Challenge Project [TZ2016003]
- National Key R&D Program of China [2016YFB0400803, 2016YFB0401801]
- National Natural Science Foundation of China [61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110]
- Beijing Municipal Science and Technology Project [Z161100002116037]
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Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been investigated for decades, but its origin still remains controversial. In this study, ten u-GaN samples grown via metalorganic chemical vapor deposition (MOCVD) are investigated. It is observed from the room temperature (RT) photoluminescence (PL) measurements that the YL band is enhanced in the PL spectra of those samples if their MOCVD growth is carried out with a decrease of pressure, temperature, or flow rate of NH3. Furthermore, a strong dependence of YL band intensity on the carbon concentration is found by secondary ion mass spectroscopy (SIMS) measurements, demonstrating that the increased carbon-related defects in these samples are responsible for the enhancement of the YL band.
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