Journal
THIN SOLID FILMS
Volume 564, Issue -, Pages 135-139Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2014.05.045
Keywords
Carbon impurity; Metalorganic chemical vapor deposition; High-resistance gallium nitride; High electron mobility transistors
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Funding
- National Natural Science Foundation of China [61377020, 61376089, 61223005, 61176126]
- National Science Fund for Distinguished Young Scholars [60925017]
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GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH3) flux, growth temperature, trimethyl-gallium flux and H-2 flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 x 10(9) Omega center dot cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An AlxGa1-xN/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm(2)/Vs. (C) 2014 Elsevier B.V. All rights reserved.
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