Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping
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Title
Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping
Authors
Keywords
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Journal
Materials
Volume 11, Issue 10, Pages 2022
Publisher
MDPI AG
Online
2018-10-18
DOI
10.3390/ma11102022
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