High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

标题
High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices
作者
关键词
-
出版物
Advanced Science
Volume 2, Issue 7, Pages 1500058
出版商
Wiley
发表日期
2015-05-26
DOI
10.1002/advs.201500058

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