Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 15, Issue 4, Pages 1128-1131Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2009.2015894
Keywords
Efficiency droop; InGaN/GaN; LED; multiple quantum well (MQW)
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Funding
- Taiwan National Science Council
- Formosa Epitaxy, Inc.
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Efficiency droop behavior of InGaN/GaN multiple-quantum-well LEDs with various well thicknesses is discussed. It is demonstrated that LED samples with thinner well structures possess higher external quantum efficiencies with stronger droop behaviors. The efficiency droop behavior is contributed by dislocation recombination, Auger recombination in an active region, and carrier overflow out of an active region. Simulation results suggest that at the current density region of 10-100 A/cm(2), Auger recombination is a dominant mechanism for efficiency droop behavior, while at high current density region of 100-200 A/cm(2), carrier overflow starts to be the major mechanism for the change of efficiency droop behaviors.
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