The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer

Crystallization behavior of amorphous indium–gallium–zinc-oxide films and its effects on thin-film transistor performance

(2016) Ayaka Suko et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Reliability of Crystalline Indium–Gallium–Zinc-Oxide Thin-Film Transistors Under Bias Stress With Light Illumination

(2015) Kyung Park et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Light induced instability mechanism in amorphous InGaZn oxide semiconductors

(2014) John Robertson et al.   APPLIED PHYSICS LETTERS

In-Ga-Zn-Oxide Semiconductor and Its Transistor Characteristics

(2014) Shunpei Yamazaki et al.   ECS Journal of Solid State Science and Technology

Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation

(2013) M. S. Rajachidambaram et al.   APPLIED PHYSICS LETTERS

Application of dual-heterodyne mixing to optical phase-shift keying

(2013) Toshiaki Yamazaki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer

(2012) Hsiao-Wen Zan et al.   ADVANCED MATERIALS

Metal-induced solid-phase crystallization of amorphous TiO2 thin films

(2012) Chang Yang et al.   APPLIED PHYSICS LETTERS

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

(2011) Kenji Nomura et al.   JOURNAL OF APPLIED PHYSICS

Excimer laser crystallization of InGaZnO4 on SiO2 substrate

(2011) Tao Chen et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Localization effect of a current-path in amorphous In–Ga–Zn–O thin film transistors with a highly doped buried-layer

(2011) Eugene Chong et al.   THIN SOLID FILMS

Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers

(2010) Jae Chul Park et al.   ADVANCED MATERIALS

Thin-Film Transistors

(2009) Robert A. Street   ADVANCED MATERIALS

Effects of Excimer Laser Annealing on InGaZnO4Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon

(2009) Mitsuru Nakata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor

(2008) Gun Hee Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY