The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
出版年份 2017 全文链接
标题
The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
作者
关键词
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出版物
Scientific Reports
Volume 7, Issue 1, Pages -
出版商
Springer Nature
发表日期
2017-09-01
DOI
10.1038/s41598-017-11461-0
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Crystallization behavior of amorphous indium–gallium–zinc-oxide films and its effects on thin-film transistor performance
- (2016) Ayaka Suko et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Reliability of Crystalline Indium–Gallium–Zinc-Oxide Thin-Film Transistors Under Bias Stress With Light Illumination
- (2015) Kyung Park et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Light induced instability mechanism in amorphous InGaZn oxide semiconductors
- (2014) John Robertson et al. APPLIED PHYSICS LETTERS
- In-Ga-Zn-Oxide Semiconductor and Its Transistor Characteristics
- (2014) Shunpei Yamazaki et al. ECS Journal of Solid State Science and Technology
- Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation
- (2013) M. S. Rajachidambaram et al. APPLIED PHYSICS LETTERS
- Application of dual-heterodyne mixing to optical phase-shift keying
- (2013) Toshiaki Yamazaki et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer
- (2012) Hsiao-Wen Zan et al. ADVANCED MATERIALS
- Metal-induced solid-phase crystallization of amorphous TiO2 thin films
- (2012) Chang Yang et al. APPLIED PHYSICS LETTERS
- Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy
- (2011) Kenji Nomura et al. JOURNAL OF APPLIED PHYSICS
- Excimer laser crystallization of InGaZnO4 on SiO2 substrate
- (2011) Tao Chen et al. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Localization effect of a current-path in amorphous In–Ga–Zn–O thin film transistors with a highly doped buried-layer
- (2011) Eugene Chong et al. THIN SOLID FILMS
- Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers
- (2010) Jae Chul Park et al. ADVANCED MATERIALS
- Thin-Film Transistors
- (2009) Robert A. Street ADVANCED MATERIALS
- Effects of Excimer Laser Annealing on InGaZnO4Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon
- (2009) Mitsuru Nakata et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor
- (2008) Gun Hee Kim et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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