Localization effect of a current-path in amorphous In–Ga–Zn–O thin film transistors with a highly doped buried-layer

Published 2011 View Full Article

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Title
Localization effect of a current-path in amorphous In–Ga–Zn–O thin film transistors with a highly doped buried-layer
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 519, Issue 13, Pages 4347-4350
Publisher
Elsevier BV
Online
2011-02-26
DOI
10.1016/j.tsf.2011.02.033

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