Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation
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Title
Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 17, Pages 171602
Publisher
AIP Publishing
Online
2013-10-24
DOI
10.1063/1.4826457
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Related references
Note: Only part of the references are listed.- Impact of Soft Annealing on the Performance of Solution-Processed Amorphous Zinc Tin Oxide Thin-Film Transistors
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