A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition

Title
A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 3, Pages 03B019
Publisher
Japan Society of Applied Physics
Online
2009-03-23
DOI
10.1143/jjap.48.03b019

Ask authors/readers for more resources

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now