A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

(2014) S. L. Rhode et al.   JOURNAL OF APPLIED PHYSICS

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

(2012) K Pantzas et al.   NANOTECHNOLOGY

Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer

(2010) Yong Xia et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

(2008) P.T. Törmä et al.   JOURNAL OF CRYSTAL GROWTH

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

(2008) Shi Jong Leem et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY