Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy

(2014) Guangxu Ju et al.   JOURNAL OF APPLIED PHYSICS

Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes

(2014) V. Hoffmann et al.   JOURNAL OF CRYSTAL GROWTH

Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content

(2013) L. Hoffmann et al.   APPLIED PHYSICS LETTERS

Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

(2013) T. Mehrtens et al.   APPLIED PHYSICS LETTERS

Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes

(2013) R. Vaxenburg et al.   APPLIED PHYSICS LETTERS

Correlations between Epitaxy Recipe, Characteristics, and Performance of Nitride Light Emitting Diode Structures

(2013) Eugene V. Yakovlev et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy

(2013) Liyang Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption

(2013) Nicolas Jouvet et al.   JOURNAL OF APPLIED PHYSICS

Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images

(2013) Thorsten Mehrtens et al.   ULTRAMICROSCOPY

Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering

(2012) M. E. Vickers et al.   JOURNAL OF APPLIED PHYSICS

Solid-State Lighting

(2011) Colin J. Humphreys   MRS BULLETIN

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field

(2009) Ziwen Yang et al.   APPLIED PHYSICS LETTERS

Indium distribution at the interfaces of (Ga,In)(N,As)∕GaAs quantum wells

(2008) E. Luna et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures

(2008) M. J. Galtrey et al.   JOURNAL OF APPLIED PHYSICS