The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

Title
The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 9, Pages 092106
Publisher
AIP Publishing
Online
2014-09-06
DOI
10.1063/1.4894834

Ask authors/readers for more resources

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now