Recent development of studies on the mechanism of resistive memories in several metal oxides

Building Neuromorphic Circuits with Memristive Devices

(2013) Ting Chang et al.   IEEE Circuits and Systems Magazine

Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited ${\rm HfTiO}_{x}$ Nanolaminate

(2013) Bhaswar Chakrabarti et al.   IEEE ELECTRON DEVICE LETTERS

Review of Emerging New Solid-State Non-Volatile Memories

(2013) Yoshihisa Fujisaki   JAPANESE JOURNAL OF APPLIED PHYSICS

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

(2013) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

(2013) S. Privitera et al.   MICROELECTRONIC ENGINEERING

Nanobatteries in redox-based resistive switches require extension of memristor theory

(2013) I. Valov et al.   Nature Communications

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

Evidence for electric-field-driven migration and diffusion of oxygen vacancies in Pr0.7Ca0.3MnO3

(2012) Zhaoliang Liao et al.   JOURNAL OF APPLIED PHYSICS

Electrochemical metallization cells—blending nanoionics into nanoelectronics?

(2012) Wei Lu et al.   MRS BULLETIN

Resistive switching phenomena in thin films: Materials, devices, and applications

(2012) D.B. Strukov et al.   MRS BULLETIN

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films

(2012) Zhaoliang Liao et al.   SOLID-STATE ELECTRONICS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Towards artificial neurons and synapses: a materials point of view

(2012) Doo Seok Jeong et al.   RSC Advances

Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

(2011) Ting Chang et al.   ACS Nano

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Electroforming and endurance behavior of Al/Pr0.7Ca0.3MnO3/Pt devices

(2011) Zhaoliang Liao et al.   APPLIED PHYSICS LETTERS

Three-Dimensional $\hbox{4F}^{2}$ ReRAM With Vertical BJT Driver by CMOS Logic Compatible Process

(2011) Ching-Hua Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor

(2010) Zhi Xu et al.   ACS Nano

Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films

(2010) Hu Young Jeong et al.   APPLIED PHYSICS LETTERS

FPGA Based on Integration of CMOS and RRAM

(2010) Sansiri Tanachutiwat et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Electrically Driven Redox Process in Cerium Oxides

(2010) Peng Gao et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Categorization of resistive switching of metal-Pr0.7Ca0.3MnO3-metal devices

(2009) Z. L. Liao et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

(2009) Min Kyu Yang et al.   APPLIED PHYSICS LETTERS

Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application

(2009) Xiao Sun et al.   IEEE ELECTRON DEVICE LETTERS

In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides

(2009) Peng Gao et al.   MICRON

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

Relationship between resistive switching characteristics and band diagrams ofTi/Pr1−xCaxMnO3junctions

(2009) S. Asanuma et al.   PHYSICAL REVIEW B

Effect of ruthenium oxide electrode on the resistive switching of Nb-doped strontium titanate

(2008) Musarrat Hasan et al.   APPLIED PHYSICS LETTERS

Effects of metal electrodes on the resistive memory switching property of NiO thin films

(2008) C. B. Lee et al.   APPLIED PHYSICS LETTERS

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS