Role of ultrathin Al2O3 layer in organic/inorganic hybrid gate dielectrics for flexibility improvement of InGaZnO thin film transistors

Published 2014 View Full Article

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Title
Role of ultrathin Al2O3 layer in organic/inorganic hybrid gate dielectrics for flexibility improvement of InGaZnO thin film transistors
Authors
Keywords
-
Journal
ORGANIC ELECTRONICS
Volume 15, Issue 7, Pages 1458-1464
Publisher
Elsevier BV
Online
2014-04-20
DOI
10.1016/j.orgel.2014.04.003

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