Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors
出版年份 2015 全文链接
标题
Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors
作者
关键词
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出版物
RSC Advances
Volume 5, Issue 45, Pages 36083-36087
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-04-15
DOI
10.1039/c5ra02989a
参考文献
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