Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes

Current Status of GaN-Based Solid-State Lighting

(2011) Shuji Nakamura   MRS BULLETIN

A numerical study of Auger recombination in bulk InGaN

(2010) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer

(2010) Kyu Sang Kim et al.   APPLIED PHYSICS LETTERS

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

(2010) N. I. Bochkareva et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes

(2010) Jun Ho Son et al.   OPTICS EXPRESS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels

(2010) Ümit Ozgur et al.   PROCEEDINGS OF THE IEEE

High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes

(2009) Lei Wang et al.   APPLIED PHYSICS LETTERS

Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates

(2009) Y. Yang et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS

Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

(2009) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS