Spin-valley relaxation and quantum transport regimes in two-dimensional transition-metal dichalcogenides
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Spin-valley relaxation and quantum transport regimes in two-dimensional transition-metal dichalcogenides
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 90, Issue 23, Pages -
Publisher
American Physical Society (APS)
Online
2014-12-23
DOI
10.1103/physrevb.90.235429
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Electrical Transport Properties of Single-Layer WS2
- (2014) Dmitry Ovchinnikov et al. ACS Nano
- Electronic properties of single-layer and multilayer transition metal dichalcogenidesMX2(M= Mo, W andX= S, Se)
- (2014) Rafael Roldán et al. ANNALEN DER PHYSIK
- High-performance MoS2 transistors with low-resistance molybdenum contacts
- (2014) Jiahao Kang et al. APPLIED PHYSICS LETTERS
- Mono- and Bilayer WS2 Light-Emitting Transistors
- (2014) Sanghyun Jo et al. NANO LETTERS
- All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor
- (2014) Saptarshi Das et al. NANO LETTERS
- Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
- (2014) Britton W. H. Baugher et al. Nature Nanotechnology
- Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
- (2014) Jason S. Ross et al. Nature Nanotechnology
- Solar-energy conversion and light emission in an atomic monolayer p–n diode
- (2014) Andreas Pospischil et al. Nature Nanotechnology
- Spin and pseudospins in layered transition metal dichalcogenides
- (2014) Xiaodong Xu et al. Nature Physics
- Magneto-transport in MoS2: Phase Coherence, Spin–Orbit Scattering, and the Hall Factor
- (2013) Adam T. Neal et al. ACS Nano
- Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
- (2013) Deep Jariwala et al. APPLIED PHYSICS LETTERS
- Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
- (2013) Wei Liu et al. NANO LETTERS
- Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
- (2013) Britton W. H. Baugher et al. NANO LETTERS
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Zeeman-type spin splitting controlled by an electric field
- (2013) Hongtao Yuan et al. Nature Physics
- Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals
- (2013) H. Ochoa et al. PHYSICAL REVIEW B
- Spin-orbit-mediated spin relaxation in monolayer MoS2
- (2013) H. Ochoa et al. PHYSICAL REVIEW B
- Monolayer MoS2: Trigonal warping, theΓvalley, and spin-orbit coupling effects
- (2013) Andor Kormányos et al. PHYSICAL REVIEW B
- Effect of spin-orbit interaction on the optical spectra of single-layer, double-layer, and bulk MoS2
- (2013) Alejandro Molina-Sánchez et al. PHYSICAL REVIEW B
- Intervalley Scattering and Localization Behaviors of Spin-Valley Coupled Dirac Fermions
- (2013) Hai-Zhou Lu et al. PHYSICAL REVIEW LETTERS
- Direct Measurement of the Thickness-Dependent Electronic Band Structure ofMoS2Using Angle-Resolved Photoemission Spectroscopy
- (2013) Wencan Jin et al. PHYSICAL REVIEW LETTERS
- Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
- (2013) L. Britnell et al. SCIENCE
- Breakdown of High-Performance Monolayer MoS2 Transistors
- (2012) Dominik Lembke et al. ACS Nano
- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- Electronic structure investigation of MoS2and MoSe2using angle-resolved photoemission spectroscopy andab initioband structure studies
- (2012) S K Mahatha et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- Control of valley polarization in monolayer MoS2 by optical helicity
- (2012) Kin Fai Mak et al. Nature Nanotechnology
- Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2from first principles
- (2012) Hannu-Pekka Komsa et al. PHYSICAL REVIEW B
- Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
- (2012) Wanxiang Feng et al. PHYSICAL REVIEW B
- Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
- (2012) Won Seok Yun et al. PHYSICAL REVIEW B
- z→−zSymmetry of Spin-Orbit Coupling and Weak Localization in Graphene
- (2012) Edward McCann et al. PHYSICAL REVIEW LETTERS
- Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
- (2012) Di Xiao et al. PHYSICAL REVIEW LETTERS
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
- (2011) Z. Y. Zhu et al. PHYSICAL REVIEW B
- Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2
- (2011) A. Kuc et al. PHYSICAL REVIEW B
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Quantum kinetic equation and universal conductance fluctuations in graphene
- (2008) K. Kechedzhi et al. PHYSICAL REVIEW B
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started