Thermoelectric performance of MX2 (M = Mo,W; X = S,Se) monolayers

Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2

(2012) Goki Eda et al.   ACS Nano

Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure

(2012) C. Ataca et al.   Journal of Physical Chemistry C

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers

(2011) Yi Ding et al.   PHYSICA B-CONDENSED MATTER

Theoretical study on thermoelectric properties of kinked graphene nanoribbons

(2011) Wen Huang et al.   PHYSICAL REVIEW B

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

(2011) J. N. Coleman et al.   SCIENCE

MD simulations of molybdenum disulphide (MoS2): Force-field parameterization and thermal transport behavior

(2010) Vikas Varshney et al.   COMPUTATIONAL MATERIALS SCIENCE

Geometry effects on thermoelectric properties of silicon nanowires based on electronic band structures

(2010) Gengchiau Liang et al.   JOURNAL OF APPLIED PHYSICS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Complex thermoelectric materials

(2008) G. Jeffrey Snyder et al.   NATURE MATERIALS

First-principles calculations of the ferroelastic transition between rutile-type andCaCl2-typeSiO2at high pressures

(2008) Atsushi Togo et al.   PHYSICAL REVIEW B