Double-layer channel structure based ZnO thin-film transistor grown by atomic layer deposition
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Double-layer channel structure based ZnO thin-film transistor grown by atomic layer deposition
Authors
Keywords
-
Journal
Physica Status Solidi-Rapid Research Letters
Volume 8, Issue 4, Pages 328-331
Publisher
Wiley
Online
2014-03-07
DOI
10.1002/pssr.201409044
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- High-Performance Nanowire Oxide Photo-Thin Film Transistor
- (2013) Seung-Eon Ahn et al. ADVANCED MATERIALS
- Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition
- (2013) Cheol Hyoun Ahn et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Tunable Electrical and Optical Properties in Composition Controlled Hf:ZnO Thin Films Grown by Atomic Layer Deposition
- (2012) Cheol Hyoun Ahn et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface
- (2011) Ji-In Kim et al. APPLIED PHYSICS LETTERS
- Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors
- (2011) Md Delwar Hossain Chowdhury et al. APPLIED PHYSICS LETTERS
- Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers
- (2010) Jae Chul Park et al. ADVANCED MATERIALS
- Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
- (2010) Himchan Oh et al. APPLIED PHYSICS LETTERS
- Improved Electrical Stability in the Al Doped ZnO Thin-Film-Transistors Grown by Atomic Layer Deposition
- (2010) Cheol Hyoun Ahn et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Deposition of Al doped ZnO layers with various electrical types by atomic layer deposition
- (2010) Cheol Hyoun Ahn et al. THIN SOLID FILMS
- Gate-bias stress in amorphous oxide semiconductors thin-film transistors
- (2009) M. E. Lopes et al. APPLIED PHYSICS LETTERS
- Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light- Emitting-Diode Display Panel
- (2008) Sang-Hee K. Park et al. ADVANCED MATERIALS
- Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
- (2008) Jae Kyeong Jeong et al. APPLIED PHYSICS LETTERS
- Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
- (2008) Jin-Seong Park et al. APPLIED PHYSICS LETTERS
- Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
- (2008) Jeong-Min Lee et al. APPLIED PHYSICS LETTERS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started