ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review

Temperature-dependent measurement of Auger recombination in In0.40Ga0.60N/GaN red-emitting (λ = 630 nm) quantum dots

(2014) Thomas Frost et al.   APPLIED PHYSICS LETTERS

Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

(2014) Ilya E. Titkov et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

(2013) Bastian Galler et al.   Applied Physics Express

Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study

(2013) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes

(2013) R. Vaxenburg et al.   APPLIED PHYSICS LETTERS

Sensitivity analysis of electron leakage in III-nitride light-emitting diodes

(2013) Joachim Piprek et al.   APPLIED PHYSICS LETTERS

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

(2013) M. Binder et al.   APPLIED PHYSICS LETTERS

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

(2013) Giovanni Verzellesi et al.   JOURNAL OF APPLIED PHYSICS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

(2012) Dong-Soo Shin et al.   APPLIED PHYSICS LETTERS

Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters

(2012) Mikhail V. Kisin et al.   JOURNAL OF APPLIED PHYSICS

Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes

(2012) Dario Schiavon et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Effect of active QW population on optical characteristics of polar, semipolar and nonpolar III-nitride light emitters

(2012) Mikhail V Kisin et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Temperature-dependence of the internal efficiency droop in GaN-based diodes

(2011) J. Hader et al.   APPLIED PHYSICS LETTERS

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

(2011) Qi Dai et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

(2010) Qi Dai et al.   APPLIED PHYSICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Effect of localized states on internal quantum efficiency of III-nitride LEDs

(2010) Sergey Yu. Karpov   Physica Status Solidi-Rapid Research Letters

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS