Effect of p-type doping on the oxidation of H–Si(111) studied by second-harmonic generation

Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si

(2011) Bilal Gokce et al.   APPLIED PHYSICS LETTERS

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

(2011) B. Gokce et al.   APPLIED PHYSICS LETTERS

Back-reflection Second-harmonic Generation of (111)Si: Theory and Experiment

(2011) B. Gokce et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation

(2010) Ming Lei et al.   APPLIED PHYSICS LETTERS

Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation

(2010) Heungman Park et al.   APPLIED PHYSICS LETTERS

Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si

(2010) Bilal Gokce et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Characterization of boron charge traps at the interface of Si/SiO2 using second harmonic generation

(2009) H. Park et al.   APPLIED PHYSICS LETTERS

Application of the anisotropic bond model to second-harmonic generation from amorphous media

(2008) E. J. Adles et al.   PHYSICAL REVIEW B