Effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation

Atomic force microscopy and second-harmonic generation data show that boron doping enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the reactivity of the Si-H up bonds than that of the Si-Si back bonds. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4721329]