4.6 Article

Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation

Journal

APPLIED PHYSICS LETTERS
Volume 96, Issue 24, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3455317

Keywords

hot carriers; optical harmonic generation; silicon-on-insulator; two-photon processes

Funding

  1. Robert Welch Foundation [F-1038]
  2. NSF [DMR-0706227]

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Time-dependent electrostatic field-induced second-harmonic (TD-EFISH) generation is used to probe optically excited hot carrier injection (HCI) from silicon-on-insulator (SOI) films as thin as 2 nm into both native oxide and buried oxide (BOX), without device fabrication. The two HCI processes induce TD-EFISH signals of opposite sign, at different rates, whereby they are distinguished straightforwardly. HCI at the SOI/BOX interface is dominated by two-photon injection into HF defect induced traps created during SOI thinning. The results demonstrate that SHG can noninvasively and quantitatively characterize HCI, a key determinant of SOI device reliability. (C) 2010 American Institute of Physics. [doi:10.1063/1.3455317]

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