Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 17, Pages 173110
Publisher
AIP Publishing
Online
2015-05-01
DOI
10.1063/1.4919724
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Conduction paths in Cu/amorphous-Ta2O5/Pt atomic switch: First-principles studies
- (2014) Bo Xiao et al. JOURNAL OF APPLIED PHYSICS
- Conductance quantization in oxygen-anion-migration-based resistive switching memory devices
- (2013) C. Chen et al. APPLIED PHYSICS LETTERS
- Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor
- (2013) S. G. Hu et al. APPLIED PHYSICS LETTERS
- High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process
- (2012) Akira Wada et al. APPLIED PHYSICS LETTERS
- Simulation of multilevel switching in electrochemical metallization memory cells
- (2012) Stephan Menzel et al. JOURNAL OF APPLIED PHYSICS
- Quantum conductance and switching kinetics of AgI-based microcrossbar cells
- (2012) S Tappertzhofen et al. NANOTECHNOLOGY
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
- (2011) Tohru Tsuruoka et al. ADVANCED FUNCTIONAL MATERIALS
- Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch
- (2011) Takeo Ohno et al. APPLIED PHYSICS LETTERS
- Low activation energy, high-quality oxidation of Si and Ge using neutral beam
- (2011) Akira Wada et al. APPLIED PHYSICS LETTERS
- Numerical simulation on neutral beam generation mechanism by collision of positive and negative chlorine ions with graphite surface
- (2011) Tomohiro Kubota et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Scaling limits of resistive memories
- (2011) Victor V Zhirnov et al. NANOTECHNOLOGY
- Sub-nanosecond switching of a tantalum oxide memristor
- (2011) Antonio C Torrezan et al. NANOTECHNOLOGY
- Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
- (2011) Takeo Ohno et al. NATURE MATERIALS
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Learning Abilities Achieved by a Single Solid-State Atomic Switch
- (2010) Tsuyoshi Hasegawa et al. ADVANCED MATERIALS
- High switching endurance in TaOx memristive devices
- (2010) J. Joshua Yang et al. APPLIED PHYSICS LETTERS
- Nanoscale Memristor Device as Synapse in Neuromorphic Systems
- (2010) Sung Hyun Jo et al. NANO LETTERS
- Forming and switching mechanisms of a cation-migration-based oxide resistive memory
- (2010) T Tsuruoka et al. NANOTECHNOLOGY
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started