First-principles calculations of indirect Auger recombination in nitride semiconductors

Auger recombination in sodium-iodide scintillators from first principles

(2015) Andrew McAllister et al.   APPLIED PHYSICS LETTERS

Unified theory of electron–phonon renormalization and phonon-assisted optical absorption

(2014) Christopher E Patrick et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Auger Recombination in GaAs from First Principles

(2014) Daniel Steiauf et al.   ACS Photonics

Enhanced Optical Absorption Due to Symmetry Breaking in TiO2(1–x)S2x Alloys

(2013) André Schleife et al.   Journal of Physical Chemistry C

Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

(2013) Emmanouil Kioupakis et al.   NEW JOURNAL OF PHYSICS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

(2012) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO2

(2012) H. Peelaers et al.   APPLIED PHYSICS LETTERS

Numerical analysis of indirect Auger transitions in InGaN

(2012) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

(2012) B. Galler et al.   APPLIED PHYSICS LETTERS

Phonon-Assisted Optical Absorption in Silicon from First Principles

(2012) Jesse Noffsinger et al.   PHYSICAL REVIEW LETTERS

Maximally localized Wannier functions: Theory and applications

(2012) Nicola Marzari et al.   REVIEWS OF MODERN PHYSICS

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

(2011) Qi Dai et al.   APPLIED PHYSICS LETTERS

Auger recombination in GaInN/GaN quantum well laser structures

(2011) M. Brendel et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

(2011) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Auger recombination rates in ZnMgO from first principles

(2011) Markus Heinemann et al.   JOURNAL OF APPLIED PHYSICS

Recombination coefficients of GaN-based laser diodes

(2011) W. G. Scheibenzuber et al.   JOURNAL OF APPLIED PHYSICS

On the formation of vacancy defects in III-nitride semiconductors

(2011) F. Tuomisto et al.   JOURNAL OF CRYSTAL GROWTH

Auger recombination in Si and GaAs semiconductors:Ab initioresults

(2011) Marco Govoni et al.   PHYSICAL REVIEW B

Determination of Internal Loss in Nitride Lasers from First Principles

(2010) Emmanouil Kioupakis et al.   Applied Physics Express

A numerical study of Auger recombination in bulk InGaN

(2010) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Band bowing and band alignment in InGaN alloys

(2010) Poul Georg Moses et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Free-carrier absorption in nitrides from first principles

(2010) Emmanouil Kioupakis et al.   PHYSICAL REVIEW B

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

(2009) M. Zhang et al.   APPLIED PHYSICS LETTERS

Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN

(2009) Qimin Yan et al.   APPLIED PHYSICS LETTERS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

(2009) Matteo Meneghini et al.   JOURNAL OF APPLIED PHYSICS

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

wannier90: A tool for obtaining maximally-localised Wannier functions

(2007) Arash A. Mostofi et al.   COMPUTER PHYSICS COMMUNICATIONS