Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments

Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

(2013) Z. Q. Wang et al.   Nanoscale

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

(2012) Feng Miao et al.   ACS Nano

Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

(2012) Zhong Qiang Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories

(2012) Zhong-tang Xu et al.   Small

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature

(2011) Ming-Jiue Yu et al.   IEEE ELECTRON DEVICE LETTERS

Intrinsic Mechanisms of Memristive Switching

(2011) Kazuki Nagashima et al.   NANO LETTERS

Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

(2010) Seunghyup Lee et al.   APPLIED PHYSICS LETTERS

Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films

(2010) Kentaro Kinoshtia et al.   APPLIED PHYSICS LETTERS

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Structural properties and resistive switching behaviour in MgxZn1−xO alloy films grown by pulsed laser deposition

(2010) Xun Cao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film

(2010) Z Q Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions

(2010) Keisuke Oka et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering

(2010) Zhenguo Ji et al.   SOLID STATE COMMUNICATIONS

Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

(2009) Min Kyu Yang et al.   APPLIED PHYSICS LETTERS

Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films

(2009) Kyung Min Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

First-principle study of native defects in CuScO2and CuYO2

(2008) Fang Zhi-Jie et al.   Chinese Physics B

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Electronic structure of cation-deficient CoO from first principles

(2008) U. D. Wdowik et al.   PHYSICAL REVIEW B