Improvement in the negative bias illumination temperature stress instability of In-Ga-Zn-O thin film transistors using an Al2O3 buffer layer

Published 2011 View Full Article

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Title
Improvement in the negative bias illumination temperature stress instability of In-Ga-Zn-O thin film transistors using an Al2O3 buffer layer
Authors
Keywords
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Journal
Physica Status Solidi-Rapid Research Letters
Volume 5, Issue 5-6, Pages 178-180
Publisher
Wiley
Online
2011-04-12
DOI
10.1002/pssr.201105090
References
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