Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers

Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures

(2013) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells

(2012) T. M. Al tahtamouni et al.   APPLIED PHYSICS LETTERS

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

(2012) J. E. Northrup et al.   APPLIED PHYSICS LETTERS

Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN Quantum Wells

(2012) Huimin Lu et al.   OPTICS EXPRESS

Pressure-dependent reordering of valence band states in GaN/AlxGa1−xN quantum wells

(2012) W. Bardyszewski et al.   PHYSICAL REVIEW B

Strain-driven light-polarization switching in deep ultraviolet nitride emitters

(2011) T. K. Sharma et al.   PHYSICAL REVIEW B

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

(2010) Jing Zhang et al.   APPLIED PHYSICS LETTERS

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

(2010) Tim Kolbe et al.   APPLIED PHYSICS LETTERS

Inverse-Quantum-Engineering: A New Methodology for Designing Quantum Cascade Lasers

(2010) Inès Waldmuelle et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Optical anisotropy in [0001]-orientedAlxGa1−xN/AlNquantum wells(x>0.69)

(2009) R. G. Banal et al.   PHYSICAL REVIEW B

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics