Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

(2012) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Femtosecond-laser-driven photoelectron-gun for time-resolved cathodoluminescence measurement of GaN

(2012) T. Onuma et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density $m$-Plane In$_{0.05}$Ga$_{0.95}$N Epilayer Grown on a Freestanding GaN Substrate

(2011) Munehito Kagaya et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

(2010) S. F. Chichibu et al.   APPLIED PHYSICS LETTERS

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

(2009) P. Corfdir et al.   JOURNAL OF APPLIED PHYSICS

Bulk GaN crystals grown by HVPE

(2009) Kenji Fujito et al.   JOURNAL OF CRYSTAL GROWTH

Direct correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy

(2008) D. Takamizu et al.   JOURNAL OF APPLIED PHYSICS

High-quality nonpolarm-plane GaN substrates grown by HVPE

(2008) Kenji Fujito et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE