Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3284653
Keywords
aluminium compounds; excitons; high-speed optical techniques; III-V semiconductors; photoluminescence; polaritons; radiative lifetimes; semiconductor epitaxial layers; time resolved spectra; wide band gap semiconductors
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Funding
- MEXT, Japan [18069001]
- Grants-in-Aid for Scientific Research [18069001] Funding Source: KAKEN
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Extremely radiative nature of high-quality AlN single crystalline epilayers was identified by means of far ultraviolet time-resolved photoluminescence using a frequency-quadrupled femtosecond Al2O3:Ti laser. The gross radiative lifetimes of a free excitonic polariton emission as short as 10 ps at 7 K and 180 ps at 300 K were revealed, which are the shortest ever reported for bulk semiconductor materials.
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