InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment

Published 2012 View Full Article

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Title
InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 7, Pages 985-987
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-06-08
DOI
10.1109/led.2012.2196972
References
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