Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors

Role of Si as carrier suppressor in amorphous Zn–Sn–O

(2012) IlJoon Kang et al.   CURRENT APPLIED PHYSICS

Linear-response calculation of the effective coulomb interaction between closed-shell localized electrons: Cu, Zn, and ZnO

(2012) Woo-Jin Lee et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state

(2012) Ho-Hyun Nahm et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

The effect of UV-assisted cleaning on the performance and stability of amorphous oxide semiconductor thin-film transistors under illumination

(2011) Joon Seok Park et al.   APPLIED PHYSICS LETTERS

Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn–Sn–O thin film transistors

(2011) Bong Seob Yang et al.   APPLIED PHYSICS LETTERS

Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material

(2011) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

(2011) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

(2011) Kwang Hwan Ji et al.   APPLIED PHYSICS LETTERS

Light-Enhanced Bias Stress Effect on Amorphous In-Ga-Zn-O Thin-film Transistor with Lights of Varying Colors

(2011) Wei-Tsung Chen et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress

(2011) Kwang Hwan Ji et al.   MICROELECTRONIC ENGINEERING

G0W0band gap of ZnO: Effects of plasmon-pole models

(2011) M. Stankovski et al.   PHYSICAL REVIEW B

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

(2011) Hyeon-Kyun Noh et al.   PHYSICAL REVIEW B

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

(2010) Shinhyuk Yang et al.   APPLIED PHYSICS LETTERS

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

(2010) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors

(2010) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

(2010) Jang-Yeon Kwon et al.   APPLIED PHYSICS LETTERS

The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination

(2010) Joon Seok Park et al.   APPLIED PHYSICS LETTERS

Large Photoresponse in Amorphous In–Ga–Zn–O and Origin of Reversible and Slow Decay

(2010) Dong Hee Lee et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals

(2010) S. J. Clark et al.   PHYSICAL REVIEW B

Quasiparticle Band Gap of ZnO: High Accuracy from the ConventionalG0W0Approach

(2010) Bi-Ching Shih et al.   PHYSICAL REVIEW LETTERS

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

(2009) M. E. Lopes et al.   APPLIED PHYSICS LETTERS

Interplay between Order and Disorder in the High Performance of Amorphous Transparent Conducting Oxides

(2009) Aron Walsh et al.   CHEMISTRY OF MATERIALS

Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

(2009) Jae-Heon Shin et al.   ETRI JOURNAL

Instability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors under Light Illumination

(2009) Dharam Pal Gosain et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology

Novel ZrInZnO Thin-film Transistor with Excellent Stability

(2008) Jin-Seong Park et al.   ADVANCED MATERIALS

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

(2008) Jeong-Min Lee et al.   APPLIED PHYSICS LETTERS

Physics of amorphous conducting oxides

(2008) John Robertson   JOURNAL OF NON-CRYSTALLINE SOLIDS

Defect energetics in ZnO: A hybrid Hartree-Fock density functional study

(2008) Fumiyasu Oba et al.   PHYSICAL REVIEW B