Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress

Published 2011 View Full Article

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Title
Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 88, Issue 7, Pages 1412-1416
Publisher
Elsevier BV
Online
2011-04-06
DOI
10.1016/j.mee.2011.03.069

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