"Zero" Drain-Current Drift of Inversion-Mode NMOSFET on InP(111)A Surface

A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

(2011) Yu Yuan et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of Electron Mobility in Inversion-Mode $ \hbox{Al}_{2}\hbox{O}_{3}/\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ MOSFETs

(2011) Weike Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

(2009) Hiroyuki Ishii et al.   Applied Physics Express

Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics

(2009) M. Xu et al.   APPLIED PHYSICS LETTERS

Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

(2008) Han Zhao et al.   APPLIED PHYSICS LETTERS

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

(2008) T. D. Lin et al.   APPLIED PHYSICS LETTERS

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

(2008) Y. Xuan et al.   IEEE ELECTRON DEVICE LETTERS

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A