Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 14, Issue 8, Pages H311-H313Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3574526
Keywords
atomic force microscopy; gold; hafnium compounds; metallisation; nanoelectronics; nanofabrication; nanostructured materials; platinum; random-access storage; thin film devices
Funding
- Ministry of Education, Science and Technology [2010-0020230, 2009-0093818]
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A HfO2 thin film is incorporated into a resistive random access memory (RRAM) device based on conducting atomic force microscopy (CAFM). The RRAM element consists of an Au nanodot connected to a CAFM tip as an anode, a HfO2 channel, and a Pt electrode as a cathode. A nearly uniform Au nanodot array with a mean Au dot diameter of 25 nm is formed using a DBC nano-template and metallization techniques. The nanoscale HfO2 RRAM element exhibits unipolar resistive switching behavior similar to that of a typical RRAM bit. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3574526] All rights reserved.
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