Highly strained 1.22-mu m InGaAs lasers grown by MOVPE

In this work, the highly strained In0.39Ga0.61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 mu m under continuous-wave conditions, whereas the threshold current density (J(th)) and transparency current density (J(tr)) were 140 and 37.2 A/cm(2), respectively. To the best of our knowledge, the J(tr) was the lowest among the reported InGaAs lasers longer than 1.2 mu m. The characteristic temperature (T-0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.