Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates

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Title
Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates
Authors
Keywords
-
Journal
Applied Physics Express
Volume 1, Issue -, Pages 091102
Publisher
IOP Publishing
Online
2008-08-29
DOI
10.1143/apex.1.091102

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