Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
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Title
Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
Authors
Keywords
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Journal
MRS BULLETIN
Volume 40, Issue 05, Pages 399-405
Publisher
Cambridge University Press (CUP)
Online
2015-05-08
DOI
10.1557/mrs.2015.89
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- (2014) Shuang Liu et al. ELECTRONICS LETTERS
- A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT
- (2014) Raphael Brown et al. IEEE ELECTRON DEVICE LETTERS
- Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region
- (2013) M. Jurkovic et al. IEEE ELECTRON DEVICE LETTERS
- Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates
- (2013) Oliver Hilt et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Evaluation and Application of 600 V GaN HEMT in Cascode Structure
- (2013) Xiucheng Huang et al. IEEE TRANSACTIONS ON POWER ELECTRONICS
- Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration
- (2013) Xiucheng Huang et al. IEEE TRANSACTIONS ON POWER ELECTRONICS
- Effects of Initial GaN Growth Mode on Patterned Sapphire on the Opto-Electrical Characteristics of GaN-Based Light-Emitting Diodes
- (2013) Hung-Ming Chang et al. Journal of Display Technology
- AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal
- (2013) Herwig Hahn et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Gallium nitride devices for power electronic applications
- (2013) B Jayant Baliga SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Merits of gallium nitride based power conversion
- (2013) Mark J Scott et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Prospects for the application of GaN power devices in hybrid electric vehicle drive systems
- (2013) Ming Su et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique
- (2012) Han-Yin Liu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach
- (2011) R. R. Pelá et al. APPLIED PHYSICS LETTERS
- Growth Mechanism and Strain Variation of GaN Material Grown on Patterned Sapphire Substrates With Various Pattern Designs
- (2011) Mei-Tan Wang et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- AlN/GaN MOS-HEMTs With Thermally Grown $\hbox{Al}_{2} \hbox{O}_{3}$ Passivation
- (2011) Sanna Taking et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Dislocation structure of GaN films grown on planar and nano-patterned sapphire
- (2011) Wanjun Cao et al. JOURNAL OF APPLIED PHYSICS
- Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C
- (2011) Li Wang et al. THIN SOLID FILMS
- Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability
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- (2010) Juergen Biela et al. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
- Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
- (2010) Kevin J. Chen et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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