Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Published 2011 View Full Article

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Title
Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 519, Issue 19, Pages 6443-6446
Publisher
Elsevier BV
Online
2011-05-18
DOI
10.1016/j.tsf.2011.04.224

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