AlN/GaN MOS-HEMTs With Thermally Grown $\hbox{Al}_{2} \hbox{O}_{3}$ Passivation

Published 2011 View Full Article

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Title
AlN/GaN MOS-HEMTs With Thermally Grown $\hbox{Al}_{2} \hbox{O}_{3}$ Passivation
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 5, Pages 1418-1424
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-03-04
DOI
10.1109/ted.2011.2114665

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