Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique

A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

(2012) Han-Yin Liu et al.   IEEE ELECTRON DEVICE LETTERS

Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

(2012) Ching-Sung Lee et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al$_{2}$O$_{3}$/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si

(2011) Hong Zhou et al.   Applied Physics Express

High-Performance GaN MOSFET With High-$\kappa$$\hbox{LaAlO}_{3}/\hbox{SiO}_{2}$ Gate Dielectric

(2011) C. Y. Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Novel Oxide-Passivated AlGaN/GaN HEMT by Using Hydrogen Peroxide Treatment

(2011) Han-Yin Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of Short-Term DC-Bias-Induced Stress on n-GaN/AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as a Gate Dielectric

(2010) Sarbani Basu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al[sub 2]O[sub 3] as Gate Dielectric

(2010) Sarbani Basu et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Reliability issues of Gallium Nitride High Electron Mobility Transistors

(2010) Gaudenzio Meneghesso et al.   International Journal of Microwave and Wireless Technologies

GaN HEMT reliability

(2009) J.A. del Alamo et al.   MICROELECTRONICS RELIABILITY

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method

(2008) Li-Hsien Huang et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

(2008) M. Faqir et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY